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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3300
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·Low Collector Saturation Voltage : V
APPLICATIONS
·Designed for DC-DC converter, emergency lighting
inverter and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T
= 50V(Min)
(BR)CEO
= 0.5V(Max)@ IC= 5A
CE(sat)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CP
I
B
C
T
J
Collector-Base Voltage 100 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 15 V
Collector Current-Continuous 15 A
Collector Current-Peak 25 A
B Base Current-Continuous 4 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
60 W
℃
T
stg
Storage Temperature Range -55~150
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3300
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(
V
BE(
I
CBO
I
EBO
h
FE
f
T
Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 50 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 80mA B 0.5 V
)
sat
Base-Emitter Saturation Voltage IC= 5A; IB= 80mA B 1.2 V
)
sat
Collector Cutoff Current VCB= 100V ; IE= 0 10 μA
Emitter Cutoff Current VEB= 15V ; IC= 0 10 μA
DC current gain IC= 5A ; VCE= 1V 60 360
Current-Gain—Bandwidth Product IE= -1A ; VCE= 12V 18 MHz
isc Website：www.iscsemi.cn
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