Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3296
DESCRIPTION ·
·With TO-220Fa package
·Wide area of safe operation
·Complement to type 2SA1304
APPLICATIONS
·Power amplifier applications
·Vertical output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 1.5 A
IB Base current 0.5 A
PC Collector power dissipation
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 150 V
Emitter-base voltage Open collector 5 V
℃)
Ta=25℃ 2
W
=25℃ 20
T
C
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3296
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 35 pF
fT Transition frequency IC=0.5A ; VCE=10V 4 MHz
Collector-emitter breakdown voltage IC=10mA , IB=0 150 V
Collector-emitter saturation voltage IC=0.5A ;IB=50mA 1.5 V
Base-emitter on voltage IC=0.5A ; VCE=10V 0.85 V
Collector cut-off current VCB=120V; IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 10 μA
DC current gain IC=0.5A ; VCE=10V 40 140
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3296
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3296
4
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