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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3285
DESCRIPTION
·With TO-3PN package
·High speed switching
·Good linearity of h
·High V
APPLICATIONS
·For high speed switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
FE
CBO
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
ICP Collector current-peak 6 A
IB Base current 2 A
Collector-base voltage Open emitter 1000 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 7 V
=25℃)
C
PC Collector power dissipation
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
TC=25℃
=25℃
T
a
70
W
2.5
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3285
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
V
BE
I
CBO
I
EBO
(sat)
(sat)
Collector-emitter sustaining voltage IC=0.5A ; IE=0 800 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=2A; IB=0.4A 1.5 V
C
=2A; IB=0.4A 1.5 V
C
Collector cut-off current VCB=1000V; IE=0 50 μA
Emitter cut-off current VEB=7V; IC=0 50 μA
hFE DC current gain IC=2A ; VCE=5V 6
fT Transition frequency IC=0.2A ; VCE=5V 4 MHz
Switching times
ton
ts
tf
Turn-on time 1.0 μs
Storage time 2.5 μs
Fall time
IC=2A; IB1=0.4A;IB2=-0.8A
V
=250V
CC
0.5 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3285
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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