Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3272
DESCRIPTION
·With TO-126 package
·High breakdown voltage
APPLICATIONS
·For power amplification
PINNING（see Fig.2）
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.1 A
ICM Collector current-peak 0.2 A
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 5 V
℃)
PC Collector power dissipation TC=25℃ 10 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3272
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=50mA ;IB=5m A 2.0 V
CEsat
V
V
V
Collector-base breakdown voltage IC=10μA;IE=0 300 V
(BR)CBO
Collector-emitter breakdown voltage IC=1mA; IB=0 300 V
(BR)CEO
Emitter-base breakdown voltage IE=10μA; IC=0 5 V
(BR)EBO
hFE DC current gain IC=10mA ; VCE=10V 39 180
I
Collector cut-off current VCB=200V; IE=0 0.5 μA
CBO
I
Emitter cut-off current VEB=4V; IC=0 0.5 μA
EBO
COB Output capacitance IE=0; VCB=30V;f=1MHz 3 pF
fT Transition frequency IC=10mA ; VCB=30V 50 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3272
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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