Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3258
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1293
·Low collector saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICM Collector current-Peak 8 A
IB Base current 1 A
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 7 V
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
30 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3258
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector -emitter breakdown voltage IC=10mA ,IB=0 80 V
(BR)CEO
V
Collector-emitter saturation voltage IC=3A; IB=0.15A 0.4 V
CEsat
V
Base-emitter saturation voltage IC=3A; IB=0.15A 1.2 V
BEsat
I
Collector cut-off current VCB=100V; IE=0 1
CBO
I
Emitter cut-off current VEB=7V; IC=0 1
EBO
h
DC current gain IC=1A ; VCE=1V 70 240
FE-1
h
DC current gain IC=3A ; VCE=1V 40
FE-2
μA
μA
Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 80 pF
fT Transition frequency IC=1A ; VCE=4V 120 MHz
Switching times
ton Turn-on time 0.2
μs
I
=3.0A IB1=- IB2=0.15A
ts Storage time 1.0
tf Fall time
C
RL=10Ω;VCC≈30V
0.1
h
Classifications
FE-1
O Y
70-140 120-240
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3258
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3258
4
Loading...