Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3257
DESCRIPTION
·With TO-220 package
·High collector breakdown voltage
·Excellent switching times
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
ICM Collector current-peak 15 A
IB Base current 2 A
Collector-base voltage Open emitter 250 V
Collector-emitter voltage Open base 200 V
Emitter-base voltage Open collector 7 V
TC=25℃
PC Collector power dissipation
Ta=25℃
Tj Junction temperature 150
T
Storage temperature -55~150
stg
1.5
W
40
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3257
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=10mA ;IB=0 200 V
Collector-base breakdown voltage IC=1mA ;IE=0 250 V
Collector-emitter saturation voltage IC=5A;IB=0.5A 1.0 V
Base-emitter saturation voltage IC=5A;IB=0.5A 1.5 V
Collector cut-off current VCB=200V;IE=0 100
μA
Emitter cut-off current VEB=7V; IC=0 1.0 mA
DC current gain IC=10mA ; VCE=5V 15
DC current gain IC=5A ; VCE=5V 20 80
Switching times
tr Rise time 1.0
μs
=-IB2=0.6A;VCC≈150V
I
ts Storage time 2.5
tf Fall time
B1
RL=25Ω
1.0
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3257
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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