Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3252
DESCRIPTION
·Low Collector Saturation Voltage
·Good Linearity of h
·High Switching Speed
·Complement to Type 2SA1288
APPLICATIONS
·Various inductance lamp drivers for electrical equipment
·Inverters, converters
·Power amplifier
·Switching regulator, dirver
ABSOLUTE MAXIMUM RATINGS(T
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage 80 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 3 A
Collector Current-Pulse 5 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
30 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3252
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(
I
CBO
I
EBO
h
FE
f
T
sat
Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 60 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 80 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 1.5A; IB= 75mA 0.4 V
)
Collector Cutoff Current VCB= 40V; IE= 0 100 μA
Emitter Cutoff Current VEB= 4V; IC= 0 100 μA
DC Current Gain IC= 1A; VCE= 2V 70 280
Current-Gain—Bandwidth Product IC=1A; VCE= 5V 100 MHz
h
Classifications
FE
Q R S
70-140 100-200 140-280
isc Website：www.iscsemi.cn
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