Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3250
DESCRIPTION
·With TO-220 package
·High V
·Large P
CEO
C
APPLICATIONS
·For TV video output amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.1 A
ICP Collector current-peak 0.2 A
PC Collector power dissipation
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 7 V
℃)
T
=25℃
C
15 W
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3250
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(sat)
Collector-emitter breakdown voltage IC=0.1mA ;IB=0 300 V
Collector-base breakdown voltage IC=0.1mA ;IE=0 300 V
Emitter-base breakdown voltage IE=0.1mA ;IC=0 7 V
Collector-emitter saturation voltage IC=50mA ;IB=5mA 1.5 V
VBE Base-emitter on voltage IC=30mA ; VCE=10V 1.2 V
h
DC current gain IC=5mA ; VCE=50V 50 250
FE-1
h
DC current gain IC=30mA ; VCE=10V 30
FE-2
COB Collector outp ut capacitance IE=0; VCB=30V,f=1MHz 5.0 pF
fT Transition frequency IE=-20mA ; VCB=30V 70 100 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3250
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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