Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3235
DESCRIPTION
·With TO-220 package
·High voltage,high speed
·Low saturation voltage
APPLICATIONS
·For high voltage ,high speed and
high power switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
ICM Collector current-Peak 4 A
PC Collector power dissipation TC=25℃ 20 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3235
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=10mA; IB=0 400 V
(BR)CEO
(BR)CBO
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-base breakdown voltage IC=1mA; IE=0 500 V
Emitter-base breakdown voltage IE=1mA; IC=0 7 V
Collector-emitter saturation voltage IC=1A; IB=0.2 A 1.0 V
Base-emitter saturation voltage IC=1A; IB=0.2 A 1.5 V
Collector cut-off current VCB=400V; IE=0 10
Emitter cut-off current VEB=5V; IC=0 10
μA
μA
hFE DC current gain IC=0.1A ; VCE=5V 20 50
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3235
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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