Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3231
DESCRIPTION
·With TO-220 package
·Wide area of safe operation
APPLICATIONS
·Switching regulators
·General purpose power amplifiers
·TV horizontal output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 4 A
PC Collector power dissipation TC=25℃ 40 W
Collector-base voltage Open emitter 200 V
Collector-emitter voltage Open base 150 V
Emitter-base voltage Open collector 7 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3231
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=25mA ;IB=0 150 V
Collector-base breakdown voltage IC=1mA ;IE=0 200 V
Emitter-base breakdown voltage IE=1mA ;IC=0 7 V
Collector-emitter saturation voltage IC=4A; IB=0.4A 1.0 V
Collector cut-off current VCB=200V;IE=0 100 μA
Emitter cut-off current VEB=7V; IC=0 100 μA
hFE DC current gain IC=1A ; VCE=5V 30 150
fT Transition frequency IC=0.5A ; VCE=5V 8 MHz
2
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3231
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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