Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3230
DESCRIPTION
FE
·With TO-220 package
·Complement to type 2SA1276
·Good linearity of h
APPLICATIONS
·General purpose applications
·Cordless telephone tx final amplifier
application for 1.7MHz system
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
IE Emitter current -3 A
PC Collector power dissipation
Collector-base voltage Open emitter 30 V
Collector-emitter voltage Open base 30 V
Emitter-base voltage Open collector 5 V
℃)
T
=25℃
C
10 W
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3230
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
Collector-emitter breakdown voltage IC=10mA ;IB=0 30 V
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
Collector-emitter saturation voltage IC=2A ;IB=0.2 A 0.3 0.8 V
VBE Base-emitter on voltage IC=0.5A ; VCE=2V 0.75 1.0 V
I
Collector cut-off current VCB=20V; IE=0 1.0
CBO
I
Emitter cut-off current VEB=5V; IC=0 1.0
EBO
h
DC current gain IC=0.5A ; VCE=2V 70 240
FE-1
h
DC current gain IC=2.5A ; VCE=2V 25
FE-2
μA
μA
COB Collector outp ut capacitance IE=0; VCB=10V,f=1MHz 35 pF
fT Transition frequency IC=0.5A ; VCE=2V 100 MHz
h
Classifications
FE-1
O Y
70-140 120-240
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3230
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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