Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3229
DESCRIPTION
·With TO-220F package
·High voltage: V
APPLICATIONS
·For color TV chroma output applications
PINNING
PIN DESCRIPTION
=300V(min)
CEO
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 100 mA
IB Base current 20 mA
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 5 V
℃)
PC Collector power dissipation 2 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3229
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=10mA; IB=1m A 1.0 V
CEsat
I
V
V
Collector-emitter breakdown voltage
(BR)CEO
Emitter-base breakdown voltage
(BR)EBO
h
DC current gain IC=0.5mA ; VCE=10V 20
FE-1
h
DC current gain IC=20mA ; VCE=10V 30 200
FE-2
=100μA; IB=0
C
I
=10μA; IC=0
E
300 V
7 V
I
Collector cut-off current VCB=240V; IE=0 1.0
CBO
I
Emitter cut-off current VEB=5V; IC=0 1.0
EBO
μA
μA
COB Output capacitance IE=0; VCB=20V;f=1MHz 4.0 pF
fT Transition frequency IE=20mA ; VCB=20V 75 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3229
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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