Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3214
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For switching regulator and DC/DC
converter applications
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICM Collector current-peak 8 A
IB Base current 3 A
PC Collector power dissipation
Collector-base voltage Open emitter 1200 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 7 V
T
=25℃
C
80 W
Tj Junction temperature 200
T
Storage temperature -65~200
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance from junction to mounting base 1.0
th j-mb
℃
℃
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3214
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gain IC=1.5A ; VCE=5V 10
Collector-emitter breakdown voltage IC=10mA ; IB=0 800 V
Collector-base breakdown voltage IC=1mA ; IE=0 1200 V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V
Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V
Collector cut-off current VCB=960V; IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 10 μA
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3214
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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