Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3211A
DESCRIPTION
·With TO-3PFa package
·High V
·Low collector saturation voltage
APPLICATIONS
·For high speed switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
CBO
1
2 Collector
3 Emitter
Base
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICP Collector current-peak 10 A
IB Base current 3 A
Collector-base voltage Open emitter 900 V
Collector-emitter voltage Open base 500 V
Emitter-base voltage Open collector 8 V
=25℃)
a
PC Collector power dissipation
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
TC=25℃
=25℃
T
a
70
W
3
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3211A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
(sat)
(sat)
Collector-emitter sustaining voltage IC=0.2A ;L=25mH 500 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=3A; IB=0.6A 1.0 V
C
=3A; IB=0.6A 1.5 V
C
Collector cut-off current VCB=900V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
DC current gain IC=0.1A ; VCE=5V 15
DC current gain IC=3A ; VCE=5V 8
fT Transition frequency IC=0.5A ; VCE=10V 3 MHz
Switching times
ton
Turn-on time 1.2
μs
ts
tf
Storage time 3.0
Fall time
IC=3A; IB1=-IB2=0.6A
V
=200V
CC
1.2
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3211A
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.3mm)
3
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