Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3210
DESCRIPTION ·
·With TO-3PFa package
·Low collector saturation voltage
·High breakdown voltage
APPLICATIONS
·For high speed switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
ICM Collector current-peak 20 A
IB Base current 5 A
PC Collector power dissipation
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
TC=25℃ 100
=25℃ 3
T
a
W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3210
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=10V 11 MHz
Switching times
ton Turn-on time 1.0 μs
t
stg
Collector-emitter sustaining voltage IC=0.2A;L=25mH 400 V
Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V
Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V
Collector cut-off current VCB=500V; IE=0 100 μA
Emitter cut-off current VEB=5V; IC=0 100 μA
DC current gain IC=0.1A ; VCE=5V 15
DC current gain IC=5A ; VCE=5V 8
I
=5A; VCC=100V
Storage time 2.5 μs
C
I
=-IB2=1A
B1
tf Fall time
2
1.0 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3210
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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