Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3182N
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SA1265N
APPLICATIONS
·Power amplifier applications
·Recommend for 70W high fidelity audio
frequency amplifier output stage
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
IB Base current 1 A
PT Total power dissipation TC=25℃ 100 W
Collector-base voltage Open emitter 140 V
Collector-emitter voltage Open base 140 V
Emitter-base voltage Open collector 5 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3182N
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
h
Collector-emitter breakdown voltage IC=50mA ,IB=0 140 V
(BR)CEO
V
Collector-emitter saturation voltage IC=7A; IB=0.7A 2.0 V
CEsat
V
Base-emitter voltage IC=5A ; VCE=5V 1.5 V
BE
I
Collector cut-off current VCB=140V; IE=0 5
CBO
I
Emitter cut-off current VEB=5V; IC=0 5
EBO
h
DC current gain IC=1A ; VCE=5V 55 160
FE-1
h
DC current gain IC=5A ; VCE=5V 35
FE-2
fT Transition frequency IC=1A ; VCE=5V 30 MHz
Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz 220 pF
Classifications
FE-1
μA
μA
R O
55-110 80-160
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3182N
PACKAGE OUTLINE
3
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3182N
4
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