Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3170
DESCRIPTION ·
·With TO-220Fa package
·Low collector saturation voltage
·High breakdown voltge
APPLICATIONS
·For high speed switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7 A
ICM Collector current-peak 15 A
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃ 2
PC Collector power dissipation
=25℃ 40
T
C
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3170
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=10V 8 MHz
Switching times
ton Turn-on time 1.0
Collector-emitter sustaining voltage IC=0.2A , L=25mH 400 V
Collector-emitter saturation voltage IC=3A ;IB=0.6A 1.0 V
Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V
Collector cut-off current VCB=500V; IE=0 100
Emitter cut-off current VEB=5V; IC=0 100
DC current gain IC=0.1A ; VCE=5V 15
DC current gain IC=3A ; VCE=5V 8
μA
μA
μs
t
Storage time 3.0
stg
tf Fall time
2
=3A ; IB1=-IB2=0.6A
I
C
V
=100V
CC
μs
1.0
μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3170
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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