Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3168
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For power switching applications
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 20 A
ICM Collector current-Peak 40 A
IB Base current 7 A
IBM Base current-Peak 14 A
PT Total power dissipation Tmb=25℃ 200 W
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
Tj Junction temperature 200 ℃
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance from junction to mounting base 0.63
th j-mb
℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3168
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
V
BE
I
CBO
I
CEO
I
EBO
(sat)
(sat)
Collector-emitter sustaining voltage IC=0.2A ; IB=0 400 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=10A; IB=2A 1.0 V
C
=10A; IB=2A 1.5 V
C
Collector cut-off current At rated voltage 0.1 mA
Collector cut-off current At rated voltage 0.1 mA
Emitter cut-off current At rated voltage 0.1 mA
hFE DC current gai n IC=10A ; VCE=2V 10 40
fT Transition frequency IC=2A ; VCE=10V 20 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3168
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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