Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3164
DESCRIPTION ·
·With TO-247 package
·Switching power transistor
·High breakdown voltage
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 10 A
IB Base current 4 A
PD Total power dissipation TC=25℃ 100 W
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 1.25
th j-C
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3164
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.6A ; VCE=10V 20 MHz
Collector-emitter sustaining voltage IC=0.1A; IB=0 400 V
Collector-emitt er saturation voltage IC=5A ;IB=1A 1.0 V
Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V
Collector cut-off current
At rated voltage 0.1 mA
Collector cut-off current
Emitter cut-off current At rated voltage 0.1 mA
DC current gain IC=5A ; VCE=2V 15
DC current gain IC=1mA ; VCE=2V 5
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3164
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
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