Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3163
DESCRIPTION ·
·With TO-220C package
·High breakdown voltage
·High speed switching
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
IB Base current 2 A
PC Collector dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
T
=25℃
C
50 W
℃
T
Storage temperature -55~150
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction case 2.5
th j-C
℃
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3163
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CEO
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.6A ; VCE=10V 20 MHz
Collector-emitter sustaining voltage IC=100mA ; IB=0 400 V
Collector-emitt er saturation voltage IC=3A; IB=0.3A 1.0 V
Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V
Collector cut-off current VCE=400V ;IB=0 100
Collector cut-off current VCB=500V ;IE=0 100
Emitter cut-off current VEB=7V; IC=0 100
DC current gain IC=3A ; VCE=2V 15
DC current gain IC=6A ; VCE=2V 8
μA
μA
μA
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3163
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
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