Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3159
DESCRIPTION
·With TO-220F package
·High voltage
·High switching speed
APPLICATIONS
·For switching regulator applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
ICM Collector current-peak 20 A
IB Base current 3.5 A
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
PC Collector dissipation TC=25℃ 80 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3159
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V
Collector-base breakdown voltage IC=1mA ; IE=0 500 V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
Collector-emitter saturation voltage IC=6A; IB=1.2A 1.0 V
Base-emitter saturation voltage IC=6A; IB=1.2A 1.2 V
Collector cut-off current VCB=400V ;IE=0 10
Emitter cut-off current VEB=5V; IC=0 10
DC current gain IC=1A ; VCE=5V 15 80
DC current gain IC=6A ; VCE=5V 10
μA
μA
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3159
PACKAGE OUTLINE
3
Fig.2 outline dimensions
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