Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3157
DESCRIPTION
·With TO-220 package
·High switching speed
·Low collector saturation voltage
·Complement to type 2SA1261
APPLICATIONS
·For high voltage ,high speed and
power switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
ICM Collector current-Peak 20 A
IB Base current 3.5 A
PT Total power dissipation
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 7 V
Ta=25℃
TC=25℃
1.5
W
60
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3157
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
Switching times
ton Turn-on time 0.5 μs
Collector-emitter sustaining voltage IC=5A ;IB1=0.5A;L=1mH 100 V
Collector-emitter saturation voltage IC=5A; IB=0.5A 0.6 V
Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V
Collector cut-off current VCB=100V; IE=0 0.01 mA
V
=100V; VBE=1.5V
Collector cut-off current
Emitter cut-off current VEB=5V; IC=0 0.01 mA
DC current gain IC=0.5A ; VCE=5V 40
DC current gain IC=3A ; VCE=5V 40 200
DC current gain IC=5A ; VCE=5V 20
CE
Ta=125℃
0.01
1.0
mA
ts Storage time 1.5 μs
tf Fall time
h
classifications
FE-2
M L K
40-80 60-120 100-200
2
I
=5A;IB1=-IB2=0.5A ,
C
=10Ω;VCC≈50V
R
L
0.5 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3157
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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