Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3156
DESCRIPTION
·With TO-3 package
·High breakdown voltage
:
V
=900V(Min)
CBO
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
ICP Collector current-peak
IB Base current 3 A
Collector-base voltage Open emitter 900 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 7 V
=25℃)
C
PW≤300μs, Duty Cycle≤10%
20 A
PC Collector power dissipation TC=25℃ 120 W
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3156
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-emitter breakdown voltage
=5mA ; RBE=∞
C
800 V
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
(sat)
(sat)
Collector-base breakdown voltage IC=1mA ; IE=0 900 V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
Collector cut-off current VCB=800V; IE=0 10
Emitter cut-off current VEB=5V; IC=0 10
=3A; IB=0.6A 2.0 V
C
=3A; IB=0.6A 1.5 V
C
μA
μA
DC current gain IC=0.4A ; VCE=5V 10
DC current gain IC=2A ; VCE=5V 8
COB Output capacitance IE=0 ; VCB=10V, f=1MHz 120 pF
fT Transition frequency IC=0.4A ; VCE=10V 15 MHz
Switching times
ton
ts
tf
Turn-on time 1.0
I
=4A; IB1=0.8A;IB2=-1.6A
Storage time 2.5
C
=400V ,RL=100Ω
V
CC
Fall time
2
μs
μs
0.7
μs
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3156
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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