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Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors 2SC3146
DESCRIPTION
·With TO-220C package
·High switching speed
·High DC current gain
·Wide area of safe operation
·Complement to type 2SA1260
APPLICATIONS
·60V/7A for High-Speed Drivers Applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
ABSOLUTE MAXIMUM RATINGS (T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current-DC 7 A
PC Collector power dissipation
Tj
Collector-base voltage Open emitter 70 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 5 V
Junction temperature 125 ℃
=25℃)
a
TC=25℃ 40
=25℃
T
a
1.75
W
T
stg
Storage temperature -55~125 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors 2SC3146
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-emitter breakdown voltage
=50mA ;RBE=∞
C
60 V
V
(BR)CBO
V
CE(
V
CE(
I
CBO
I
EBO
h
sat
sat
FE
Collector-base breakdown voltage IC=5mA ;IE=0 70 V
Collector-emitter saturation voltage I
)-1
Collector-emitter saturation voltage I
)-2
=3.5A ,IB=7mA 1.5 V
C
=3.5A ,IB=7mA 2.0 V
C
Collector cut-off current VCB=40V, IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 3.0 mA
DC current gain IC=3.5A ; VCE=2V 2000
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors 2SC3146
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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