Page 1
Transistor
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
2SC3130
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
Features
■
●
High transition frequency fT.
●
Small collector output capacitance Cob and common base reverse
transfer capacitance C
●
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
.
rb
Symbol
Ratings
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
15
10
3
50
150
150
–55 ~ +150
Unit
mA
mW
˚C
˚C
Unit: mm
V
V
V
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package
Marking symbol : 1S
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Base time constant
Common emitter reverse transfer capacitance
hFE ratio
*
hFE Rank classification
Rank P Q R
h
FE
75 ~ 130 110 ~ 220 200 ~ 400
Symbol
I
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
rbb' · C
C
rb
∆h
Marking Symbol 1SP 1SQ 1SR
Conditions
VCB = 10V, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
*
VCE = 4V, IC = 5mA
IC = 20mA, IB = 4mA
VCB = 4V, IE = –5mA, f = 200MHz
VCB = 4V, IE = 0, f = 1MHz
VCB = 4V, IE = –5mA, f = 31.9MHz
C
VCB = 4V, IE = 0, f = 1MHz
VCE = 4V, IC = 100µA
FE
VCE = 4V, IC = 5mA
min
10
3
75
1.4
0.75
typ
200
1.9
1.4
11
0.45
max
1
400
0.5
2.5
1.6
Unit
µA
V
V
V
GHz
pF
ps
pF
1
Page 2
Transistor
2SC3130
PC — Ta IC — V
200
)
mW
(
160
C
120
80
40
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
C
TC=Ta
IC/IB=10
CE
80
70
)
60
mA
(
C
50
40
30
20
Collector current I
10
0
012108264
)
Collector to emitter voltage VCE (V
hFE — I
360
FE
300
240
180
Ta=75˚C
25˚C
Ta=25˚C
=500µA
I
B
400µA
300µA
200µA
100µA
)
C
VCE=4V
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
02.01.60.4 1.20.8
Base to emitter voltage VBE (V
4.0
3.5
)
GHz
3.0
(
T
2.5
2.0
IC — V
Ta=75˚C
fT — I
25˚C
BE
–25˚C
E
VCE=4V
VCB=4V
Ta=25˚C
)
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
Collector current IC (mA
Cob — V
1.6
)
pF
1.4
(
ob
1.2
1.0
0.8
0.6
0.4
0.2
Collector output capacitance C
0
1 3 10 30 100
25˚C
Ta=75˚C
–25˚C
CB
)
IE=0
f=1MHz
Ta=25˚C
Collector to base voltage VCB (V
120
60
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Collector current IC (mA
)
–25˚C
1.5
1.0
Transition frequency f
0.5
0
– 0.1 –1 –10 –100– 0.3 –3 –30
)
Emitter current IE (mA
)
2
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