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INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC3110
DESCRIPTION
·Low Noise
·High Gain
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for use in RF wide band low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
I
CP
P
T
C
Collector-Base Voltage 15 V
Collector-Emitter Voltage 12 V
Emitter-Base Voltage 2.5 V
Collector Current-Continuous 30 mA
Collector Current-Peak 50 mA
Collector Power Dissipation
C
J
=25℃
@T
C
Junction Temperature 150 ℃
0.2 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC3110
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
︱S
I
CBO
I
EBO
h
C
FE
f
T
OB
21e
Collector Cutoff Current VCB= 10V; IE= 0 0.1
Emitter Cutoff Current VEB= 2V; IC= 0 1
DC Current Gain IC= 10mA ; VCE= 10V 40
Current-Gain—Bandwidth Product IE= -10mA ; VCE= 10V 4.5 GHz
Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 1.2 pF
2
Insertion Power Gain 9 12 dB
︱
IC= 20mA; VCE= 10V; f= 0.8GHz
GUM Power Gain
12 14 dB
NF Noise Figure IC= 5mA; VCE= 10V; f= 0.8GHz 1.3 2.5 dB
μA
μA
isc Website：www.iscsemi.cn
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