Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3092
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·500V/7A switching regulator applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7 A
ICP Collector current-peak
IB Base current 3 A
Collector-base voltage Open emitter 800 V
Collector-emitter voltage Open base 500 V
Emitter-base voltage Open collector 7 V
=25℃)
C
PW≤300μs, Duty Cycle≤10%
14 A
PC Collector power dissipation TC=25℃ 90 W
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3092
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
(sat)
(sat)
Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 500 V
Collector-base breakdown voltage IC=1mA ; IE=0 800 V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=3A; IB=0.6A 1.0 V
C
=3A; IB=0.6A 1.5 V
C
Collector cut-off current VCB=500V; IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 10 μA
DC current gain IC=0.6A ; VCE=5V 15 50
DC current gain IC=3A ; VCE=5V 8
COB Output capacitance IE=0 ; VCB=10V, f=1MHz 80 pF
fT Transition frequency IC=0.6 A ; VCE=10V 18 MHz
Switching times
ton
ts
tf
Turn-on time 0.5 μs
Storage time 3.0 μs
Fall time
h
classifications
FE-1
L M N
15-30 20-40 30-50
=4A; IB1=0.8A;IB2=-1.6A
I
C
=200V ,RL=50Ω
V
CC
0.3 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3092
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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