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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
2SC3074
High Current Switching Applications
· Low collector saturation voltage: V
· High speed switching time: t
· Complementary to 2SA1244
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC 5 A
Base current IB 1 A
Collector power
dissipation
Junction temperature Tj 150 °C
Storage temperature range T
(Ta = 25°C)
Ta = 25°C 1.0
Tc = 25°C
CE (sat)
= 1.0 µs (typ)
stg
= 0.4 V (max) (IC = 3 A)
60 V
CBO
50 V
CEO
5 V
EBO
P
C
−55 to 150 °C
stg
20
W
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-7B1A
Weight: 0.36 g (typ.)
JEDEC ―
JEITA ―
TOSHIBA 2-7J1A
Weight: 0.36 g (typ.)
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2SC3074
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
Collector-emitter breakdown voltage V
DC current gain
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency fT VCE = 4 V, IC = 1 A ― 120 ― MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 80 ― pF
Turn-on time ton ― 0.1 ―
Switching time
Storage time t
Fall time t
(Ta = 25°C)
(BR) CEOIC
h
FE (1)
h
FE (2)
CE (sat)
BE (sat)
VCB = 50 V, IE = 0 ― ― 1 µA
CBO
VEB = 5 V, IC = 0 ― ― 1 µA
EBO
= 10 mA, IB = 0 50 ― ― V
V
= 1 V, IC = 1 A 70 ― 240
(Note)
― 1.0 ―
stg
f
CE
VCE = 1 V, IC = 3 A 30 ― ―
IC = 3 A, IB = 0.15 A ― 0.2 0.4 V
IC = 3 A, IB = 0.15 A ― 0.9 1.2 V
V
CC
OUTPUT
10 Ω
= 30 V
― 0.1 ―
20 µs
INPUT
B1
I
I
= −IB2 = 0.15 A,
B1
DUTY CYCLE ≤ 1%
I
B2
I
B1
I
B2
µs
Note: h
classification O: 70 to 140, Y: 120 to 240
FE (1)
Marking
C3074 Product No.
Lot No.
hFE Classification
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
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2SC3074
10
8
(A)
C
6
4
Collector current I
2
100
0
0
2 4 6 8 12 10
Collector-emitter voltage VCE (V)
– VCE
I
C
90
IB = 10 mA
0
80
70
60
50
40
30
20
Common emitter
Tc = 100°C
1.2
1.0
IB = 10 mA
0.8
(V)
0.6
CE
V
0.4
Collector-emitter voltage
0.2
0
0
20
1 2 3 4 5 6
Collector current IC (A)
– IC
V
CE
Common emitter
Tc = 25°C
200
300
500
100 80
150
7
60
40
1.0
(V)
CE
0.8
IB = 10 mA
0.6
20
0.4
0.2
Collector-emitter voltage V
0
0 1 2 3 4 5 6 7
Collector current IC (A)
– IC
V
CE
Common emitter
Tc = 100°C
100
80
60
40
120
150
200
500
1.2
1.0
(V)
CE
IB = 20 mA
0.8
0.6
0.4
0.2
Collector-emitter voltage V
0
0 1 2 3 4 5 6 7
40 200
Collector current IC (A)
– I
V
CE
C
Common emitter
Tc = −55°C
120
160
250
300
500
1000
500
300
FE
100
Tc = 100°C
25
DC current gain h
50
30
−55
10
0.03 0.1 0.3 1 3 10
Collector current IC (A)
– IC
h
FE
Common emitter
VCE = 1 V
1
Common emitter
0.5
IC/IB = 20
0.3
(V)
0.1
CE (sat)
0.05
V
0.03
Collector-emitter saturation voltage
0.01
0.03 0.1 0.3 1 3 10
Collector current IC (A)
V
CE (sat)
Tc = −55°C
– IC
100
25
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2SC3074
10
5
3
V
BE (sat)
– IC
Common emitter
IC/IB = 20
(V)
Base-emitter saturation voltage
1
BE (sat)
0.5
V
0.3
0.1
0.03
Tc = −55°C
25
100
0.1 0.3 1 3 10
Collector current IC (A)
10
IC max (pulsed)*
5
IC max (continuous)
3
Safe Operating Area
1
(A)
C
0.5
0.3
DC operation
Tc = 25°C
1 ms*
10 ms*
0.1
*: Single nonrepetitive pulse
Collector current I
0.05
Tc = 25°C
Curves must be derated
0.03
linearly with increase in
temperature.
0.01
0.1
V
max
CEO
30 100 3 10 0.3 1
Collector-emitter voltage VCE (V)
(A)
C
Collector current I
(W)
C
Collector power dissipation P
– VBE
I
5
4
3
2
1
0
0
0.4 0.8 1.2 1.6 2.4 2.0
Base-emitter voltage VBE (V)
C
−55Tc = 100°C
25
– Ta
P
28
24
(1)
20
16
12
8
(2)
4
(3)
0
0
20 40 60 80 100 120 160
Ambient temperature Ta (°C)
C
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
Common emitter
VCE = 1 V
140
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2SC3074
A
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
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