Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3060
DESCRIPTION
·With TO-3 package
·Ultra-fast switching
·Wide area of safe operation
·High breakdown voltage
APPLICATIONS
·Switching regulators
·Motor controls
·Ultrasonic oscillators
·Class C and D amplifiers
·Deflection circuits
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICP Collector current-pulse
Collector-base voltage Open emitter 1200 V
Collector-emitter voltage Open base 850 V
Emitter-base voltage Open collector 7 V
=25℃)
C
PW≤25μs,Duty cycle≤50%
8 A
IB Base current 3 A
T
PC Collector power dissipation
Tj
T
stg
Junction temperature 175
Storage temperature -65~175
=25℃
C
150 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3060
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 850 V
Collector-base breakdown voltage IC=1mA; IE=0 1200 V
Emitter-base breakdown voltage IE=1mA; IC=0 7 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=2A; IB=0.4A 1.5 V
C
=2A; IB=0.4A 2.0 V
C
VCB=1000V; IE=0 100 μA
I
Collector cut-off current
CBO
VCB=1000V; IE=0, TC=100℃
I
Emitter cut-off current VEB=6V; IC=0 100 μA
EBO
1 mA
hFE DC current gain IC=2A ; VCE=5V 10 30
fT Transition frequency IC=0.5A ; VCE=10V 15 MHz
Cob
Output capacitance I
=0; VCB=10V,f=1MHz 120 pF
E
Switching times
tr
t
stg
t
f
Rise time 0.5 μs
Storage time 3.5 μs
Fall time
VCC=400V; IC=2A
=0.2A;IB2=-0.6A;
I
B1
0.3 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3060
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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