Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3058
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For switching regulator and DC/DC
converter applications
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 30 A
PT Total power dissipation TC=25℃ 200 W
Tj Junction temperature 200 ℃
T
stg
Collector-base voltage Open emitter 600 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
Storage temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance from junction to mounting base 1.0 ℃/W
th j-mb
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3058
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=4A ; VCE=10V 30 MHz
Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V
Collector-base breakdown voltage IC=1mA; IE=0 600 V
Emitter-base breakdown voltage IE=1mA; IC=0 7 V
Collector-emitter saturation voltage IC=20A; IB=4A 1.0 V
Base-emitter saturation voltage IC=20A; IB=4A 1.5 V
Collector cut-off current VCB=500V; IE=0 10
Emitter cut-off current VEB=5V; IC=0 10
DC current gain IC=1A ; VCE=5V 15 50
DC current gain IC=20A ; VCE=5V 10 40
μA
μA
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 420 pF
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3058
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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