Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3055
DESCRIPTION
·With TO-220C package
·High breakdown voltage
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING
PIN DESCRIPTION
·
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
ICP Collector current-pulse
PC Collector power dissipation
Collector-base voltage Open emitter 450 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
PW≤300μs,Duty cycle≤10%
T
=25℃
C
4 A
15 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3055
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 400 V
Collector-base breakdown voltage IC=1mA ; IE=0 450 V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=0.5A; IB=0.1A 1.0 V
C
=0.5A; IB=0.1A 1.2 V
C
Collector cut-off current VCB=400V ;IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 10 μA
DC current gain IC=0.1A ; VCE=5V 20 80
DC current gain IC=1A ; VCE=5V 8
fT Transition frequency IC=0.2A ; VCE=10V 28 MHz
COB Output capacitance f=1MHz ; VCB=10V 25 pF
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3055
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Loading...