Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3041
DESCRIPTION
·With TO-3 package
·Fast switching speed
·Wide area of safe operation
·High breakdown voltage
APPLICATIONS
·For switching regulator applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICP Collector current-pulse
IB Base current 3 A
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
=25℃)
C
PW≤300μs,Duty cycle≤10%
16 A
PC Collector power dissipation
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
T
C
=25℃
90 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3041
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 400 V
Collector-base breakdown voltage IC=1mA; IE=0 500 V
Emitter-base breakdown voltage IE=1mA; IC=0 7 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=4A; IB=0.8A 1.0 V
C
=4A; IB=0.8A 1.5 V
C
Collector cut-off current VCB=400V; IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 10 μA
DC current gain IC=0.8A ; VCE=5V 15
DC current gain IC=4A ; VCE=5V 8
fT Transition frequency IC=0.8A ; VCE=10V 20 MHz
Cob
Output capacitance I
=0; VCB=10V,f=1MHz 80 pF
E
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3041
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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