Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3025
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·High voltage power switching character
display horizontal deflection output
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICP Collector current-peak 6 A
PC Collector power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 6 V
=25℃)
a
T
C
=25℃
50 W
Tj
T
stg
Junction temperature 150
Storage temperature -45~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3025
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
CES
(sat)
(sat)
Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 800 V
Emitter-base breakdown voltage IE=10mA; IC=0 6 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=5A; IB=1.25A 2.0 V
C
=5A; IB=1.25A 1.5 V
C
Collector cut-off current VCE=1500V; RBE=∞ 0.5 mA
Switching times
ts
tf
Storage time 4.0 μs
=5A; IB1=1A;IB2=-2.5A
I
C
Fall time
0.5 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3025
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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