Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3012
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SA1232
·High transition frequency
APPLICATIONS
·Audio frequency power amplifier.
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
ICM Collector current-peak 15 A
Collector-base voltage Open emitter 130 V
Collector-emitter voltage Open base 130 V
Emitter-base voltage Open collector 5 V
PC Collector power dissipation TC=25℃ 100 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3012
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=5A; IB=0.5A 0.6 1.5 V
CEsat
V
Base-emitter saturation voltage IC=5A; IB=0.5A 1.3 2.0 V
BEsat
I
Collector cut-off current VCB=130V; IE=0 50 μA
CBO
I
Emitter cut-off current VEB=3V; IC=0 50 μA
EBO
h
DC current gain IC=2A ; VCE=5V 60 320
FE-1
h
DC current gain IC=5A ; VCE=5V 40
FE-2
Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 150 pF
fT Transition frequency IC=1A ; VCE=5V 60 MHz
h
Classifications
FE-1
R Q P
60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3012
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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