Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2987
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1227
·High power dissipation
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 12 A
ICM Collector current-peak 20 A
PC Collector power dissipation TC=25℃ 120 W
Collector-base voltage Open emitter 140 V
Collector-emitter voltage Open base 140 V
Emitter-base voltage Open collector 5 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2987
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=5A ;IB=0.5A 0.6 1.5 V
CEsat
V
Base-emitter saturation voltage IC=5A ;IB=0.5A 1.4 2.0 V
BEsat
I
Collector cut-off current VCB=140V; IE=0 50
CBO
I
Emitter cut-off current VEB=3V; IC=0 50
EBO
h
DC current gain IC=2A ; VCE=5V 60 320
FE-1
h
DC current gain IC=5A ; VCE=5V 40
FE-2
μA
μA
fT Transition frequency IC=1A ; VCE=5V 50 MHz
COB Collector output capacitance IE=0;f=1MHz;VCB=10V 190 pF
h
Classifications
FE-1
R Q P
60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2987
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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