Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2981
DESCRIPTION
·With TO-3 package
·High voltatge
·High speed
APPLICATIONS
·For high voltatge ,high speed and power
switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
PC Collector power dissipation TC=25℃ 100 W
Tj
Collector-base voltage Open emitter 900 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 7 V
Junction temperature 150 ℃
=25℃)
C
T
stg
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2981
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-emitter breakdown voltage
=5mA ; RBE=∞
C
800 V
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
(sat)
(sat)
Collector-base breakdown voltage IC=1mA ; IE=0 900 V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=2.5A; IB=0.5A 1.0 V
C
=2.5A; IB=0.5A 1.5 V
C
Collector cut-off current VCB=750V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
DC current gain IC=0.8A ; VCE=5V 15
DC current gain IC=4A ; VCE=5V 10
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2981
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Loading...