Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2975
DESCRIPTION
·With TO-66 package
·High breakdown voltage
·Fast switching speed.
APPLICATIONS
·For switching regulator applications
·General purpose power amplifier
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
PT Total power dissipation TC=25℃ 40 W
Tj
Collector-base voltage Open emitter 800 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
Junction temperature 175 ℃
a=25℃)
T
stg
Storage temperature -55~175 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2975
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-emitter breakdown voltage
=5mA ; RBE=∞
C
400 V
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-base breakdown voltage IC=1mA ; IE=0 800 V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
Collector-emitter saturation voltage IC=2A; IB=0.3A 1.0 V
Base-emitter saturation voltage IC=2A; IB=0.3A 1.5 V
Collector cut-off current VCB=640V ;IE=0 30
Emitter cut-off current VEB=5V; IC=0 10
μA
μA
hFE DC current gai n IC=2A ; VCE=5V 10 35
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2975
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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