Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2970
DESCRIPTION
·With TO-66 package
·High voltage, high speed
·Low saturation voltage
APPLICATIONS
·For switching applications
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
PT Total power dissipation
Tj
T
stg
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 200 V
Emitter-base voltage Open collector 7 V
Junction temperature 175
Storage temperature -55~175
a=25℃)
T
C
=25℃
40 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2970
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=50mA ; IB=0 200 V
Collector-base breakdown voltage IC=1mA ; IE=0 300 V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
Collector-emitter saturation voltage IC=4A; IB=0.4A 1.0 V
Base-emitter saturation voltage IC=4A; IB=0.4A 1.5 V
Collector cut-off current VCB=300V ;IE=0 100
Emitter cut-off current VEB=7V; IC=0 100
μA
μA
hFE DC current gai n IC=2A ; VCE=5V 15
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2970
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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