Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2964
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
PC Collector power dissipation
Tj
Collector-base voltage Open emitter 600 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
Junction temperature 150
=25℃)
C
T
C
=25℃
150 W
℃
T
stg
Storage temperature -55~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2964
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-emitter breakdown voltage
=5mA ; RBE=∞
C
400 V
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
(sat)
(sat)
Collector-base breakdown voltage IC=1mA ; IE=0 600 V
Emitter-base breakdown voltage IE=1mA ; IC=0 7 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
Collector cut-off current VCB=500V ;IE=0 100
Emitter cut-off current VEB=5V; IC=0 100
=10A; IB=2A 1.5 V
C
=10A; IB=2A 1.5 V
C
μA
μA
hFE DC current gain IC=10A ; VCE=5V 7 20
fT Transition frequency IC=2A ; VCE=10V 28 MHz
COB Collector output capacitance IE=0 ; VCB=10V,f=1MHz 230 pF
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2964
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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