Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2939
DESCRIPTION ·
·With TO-247 package
·Switching power transistor
·High breakdown voltage
APPLICATIONS
·For switching regulator applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 10 A
ICM Collector current-Peak
PD Total power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
T
=25℃
C
20 A
80 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2939
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
V
BE
I
CBO
(sat)
(sat)
Collector-emitter sustaining voltage IC=0.1A; IB=0 400 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=5A ;IB=1A 1.0 V
C
=5A ;IB=1A 1.5 V
C
Collector cut-off current
At rated voltage 0.1 mA
I
Collector cut-off current
CEO
I
Emitter cut-off current At rated voltage 0.1 mA
EBO
h
DC current gain IC=5A ; VCE=2V 10 50
FE-1
h
DC current gain IC=1mA ; VCE=2V 5
FE-2
fT Transition frequency IC=1A ; VCE=10V 20 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2939
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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