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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2934
DESCRIPTION
·With TO-126 package
·High V
·Low C
APPLICATIONS
·For TV video output amplification
PINNING（see Fig.2）
PIN DESCRIPTION
CEO
OB
1
2 Collector
3 Base
Emitter
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.2 A
PC Collector power dissipation TC=25℃ 12.5 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 7 V
℃)
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2934
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=50mA ;IB=5m A 1.5 V
CEsat
I
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
=10μA;IE=0
C
I
=100μA; IB=0
C
I
=10μA; IC=0
E
300 V
300 V
7 V
I
Collector cut-off current VCB=200V;IE=0 0.1
CBO
I
Emitter cut-off current VEB=5V; IC=0 0.1
EBO
μA
μA
hFE DC current gain IC=50mA ; VCE=10V 50 300
fT Transition frequency IC=20mA ; VCE=20V 80 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2934
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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