Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2928
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·For high voltage,high speed and high
power switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICM Collector current-peak 7 A
IB Base current 2.5 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 7 V
=25℃)
C
PC Collector power dissipation TC=25℃ 80 W
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -45~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2928
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-emitter breakdown voltage
=0.2A ; RBE=∞
C
800 V
V
(BR)EBO
V
CE
V
BE
I
CBO
I
CEO
h
FE-1
h
FE-2
(sat)
(sat)
Emitter-base breakdown voltage IE=10mA ; IC=0 7 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
Collector cut-off current VCB=1200V ;IE=0 100
Collector cut-off current
=1.5A; IB=0.3A 1.0 V
C
=1.5A; IB=0.3A 1.5 V
C
μA
V
=650V ; RBE=∞
CE
100
μA
DC current gain IC=0.5A ; VCE=5V 15
DC current gain IC=3A ; VCE=5V 7
Switching times
ton
ts
Turn-on time 1.0
I
=3.0A; VCC=250V
Storage time 3.0
C
I
=0.6A ,IB2=-1.5A
B1
μs
μs
tf
Fall time
2
1.0
μs
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2928
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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