Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2923
DESCRIPTION
·With TO-202 package
·High V
·Low C
APPLICATIONS
·For color TV chroma output applications
PINNING(See Fig.2)
PIN DESCRIPTION
CEO
OB
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.1 A
ICM Collector current-peak 0.2 A
PC Collector power dissipation
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 7 V
Ta=25℃
T
=25℃
C
1.4
W
15
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2923
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=30mA IB=3m A 1.5 V
CEsat
VBE Base-emitter on voltage IC=30mA ; VCE=10V 1.2 V
I
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
=10μA;IE=0
C
I
=100μA; IB=0
C
I
=10μA; IC=0
E
300 V
300 V
7 V
hFE DC current gain IC=5mA ; VCE=50V 50 250
COB Output capacitance IE=0; VCB=30V;f=1MHz 2.4 pF
fT Transition frequency IE=20mA ; VCB=30V 70 MHz
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2923
PACKAGE OUTLINE
3
Fig.2 outline dimensions
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