Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2902
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
ICM Collector current-Peak 30 A
PC Collector power dissipation
Tj Junction temperature 200
Collector-base voltage Open emitter 800 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 9 V
a=25℃)
T
=25℃
C
150 W
℃
T
Storage temperature -65~200
stg
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2902
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter sustaining voltage IC=0.1A ; IB=0; L=25mH 400 V
Emitter-base breakdown voltage IE=1mA; IC=0 9 V
Collector-emitter saturation voltage IC=7.5A; IB=2.5A 1.0 V
Base-emitter saturation voltage IC=7.5A; IB=2.5A 1.5 V
Collector cut-off current VCB=640V; IE=0 50
Emitter cut-off current VEB=9V; IC=0 50
μA
μA
hFE DC current gai n IC=7.5A ; VCE=5V 10 35
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2902
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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