Page 1
Silicon NPN Triple Diffused
Application
High speed and high voltage switching
Outline
TO-126 MOD
2SC2899
1. Emitter
2. Collector
1
2
3
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
CBO
CEO
EBO
C
C(peak)
C
PC*
1
500 V
400 V
10 V
0.5 A
1.0 A
0.75 W
10 W
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2SC2899
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time t
Storage time t
Fall time t
Note: 1. Pulse test
V
CEO(sus)
V
CEX(sus)
V
(BR)EBO
CBO
I
CEO
FE1
h
FE2
V
CE(sat)
V
BE(sat)
on
stg
f
400 — — V IC = 0.1 A, RBE = , L = 100
mH
400 — — V IC = 0.5 A, IB1 = –IB2 = 0.1 A,
V
= –5 V, L = 180 µH,
BE
Clamped
10 — — V IE = 10 mA, IC = 0
— — 20 µA VCB = 400 V, IC = 0
— — 50 µA VCE = 350 V, RBE =
15 — — VCE = 5 V, IC = 0.25 A*
7—— V
= 5 V, IC = 0.5 A*
CE
— — 1.0 V IC = 0.25 A, IB = 0.05 A*
— — 1.5 V
— — 1.0 µs IC = 0.5 A, IB1 = –IB2 = 0.1 A,
— — 2.0 µs VCC ≅ 150 V
— — 1.0 µs
1
1
1
Maximum Collector Dissipation Curve
12
8
1
Collector power dissipation Pc (W)
0
50 100 150
Case Temperature T
C
(°C)
Area of Safe Operation
10
iC
(peak)
1.0
(A)
C
IC
(max)
(Continuous)
0.1
Ta = 25°C, 1 Shot
0.01
Collector Current I
PW = 1 ms
DC Operation
(T
C
= 25°C)
0.001
1 3 10 30 100 300 1,000
Collector to emitter Voltage VCE (V)
50 µs
25 µs
250 µs
2
Page 3
100
80
Collector Current Derating Rate
IS/B Limit Area
(°C/W)
j-c
10
1.0
2SC2899
Transient Thermal Resistance
10 ms–10 s
3
10 µs–10 ms
60
40
20
Collector Current derating rate (%)
0
50 100 150
Case temperature TC (°C)
Reverse Bias Area of Safe Operation
1.0
0.8
(A)
C
0.6
400 V, 0.5 A
0.4
Collector Current I
0.2
IB2 = –0.1 A
450 V, 0.1 A
0
0 100 200 300 400 500
Collector to emitter Voltage V
350 V, 1 A
(V)
CE
0.3
0.1
0.03
Thermal resistance θ
0.01
0.01 0.1 1.0 10 (s)
TC = 25°C
0.01 0.1 1.0 10 (ms)
Time t
Collector to Emitter Voltage
vs. Base to Emitter Resistance
600
(V)
CER
IC = 1 mA
500
400
Collector to emitter voltage V
300
100 1 k 10 k 100 k 1 M
Base to emitter resistance R
BE
(Ω)
3
Page 4
2SC2899
Typical Output Characteristics
0.5
50
0.4
(A)
C
0.3
0.2
40
30
20
10
5 mA
Collector Current I
0.1
IB = 0
0
12345
Collector to emitter Voltage V
DC Current Transfer Ratio vs.
Collector Current
100
FE
30
75°C
= –25°C
T
C
25°C
10
3
DC current transfer ratio h
1
0.001 0.003 0.01 0.03 0.1 0.3 1.0
Collector current I
TC = 25°C
V
CE
(A)
C
(V)
CE
= 5 V
Typical Transfer Characteristics
1.0
TC = 25°C
V
= 5 V
0.8
(A)
C
CE
0.6
0.4
Collector Current I
0.2
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V
BE
(V)
Collector to Emitter Saturation
Voltage vs. Base Current
10
3
1.0
(V)
0.1 A
0.3
CE (sat)
V
1.0
0.2 A
IC = 0.05 A
0.03
Collector to emitter saturation voltage
0.01
TC = 25°C
0.001 0.003 0.01 0.03 0.1 0.3 1.0
Base current I
B
(A)
4
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2SC2899
Saturation Voltage vs. Collector Current
10
3
(V)
1.0
(V)
V
BE (sat)
0.3
BE (sat)
CE (sat)
V
V
0.1
V
CE (sat)
0.03
Base to emitter saturation voltage
Collector to emitter saturation voltage
0.01
0.001 0.003 0.01 0.03 0.1 0.3 1.0
Collector current I
1.0
0.3
lC = 5 l
B
10
3
1.0
0.3
0.1
Switching time t (µs)
TC = 25°C
(A)
C
0.03
0.01
0.001 0.003 0.01 0.03 0.1 0.3 1.0
Switching Time vs. Case Temperature
5
3
t
stg
t
f
t
on
Switching Time vs. Collector Current
t
stg
t
f
t
on
IC = 5 I
VCC 150 V=
Collector current I
.
.
C
B1 =
(A)
–5 I
B2
Switching time t (µs)
0.1
0.05
0 25 50 75 100 125
IC = 0.5 A
I
B1 = –IB2
RL = 300 Ω
VCC 150 V
Case temperature T
.
=
.
(°C)
C
= 0.1 A
5
Page 6
2SC2899
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