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Elektronische Bauelemente
FEATURES
Low Voltage.
CLASSIFICATION OF hFE
Product-Rank 2SC2883-O 2SC2883-Y
Range 100~200 160~320
Marking GO GY
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-89 1K 7’ inch
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
2SC2883
1.5 A , 30 V
SOT-89
1
2
DB
KH
L
REF.
Collector
3
C
Millimete
A
E
F G
J
Millimeter
REF.
Min. Max. Min. Max.
A 4.40 4.60 G 0.40 0.58
B 3.94 4.25 H 1.50 TYP
C 1.40 1.60 J 3.00 TYP
D 2.30 2.60 K 0.32 0.52
E 1.50 1.70 L 0.35 0.44
F 0.89 1.20
4
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise specified)
A
Base
Emitter
Parameter Symbol Rating Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Continuous Collector Current IC 1.5 A
Collector Power Dissipation PC 500 mW
Junction, Storage Temperature TJ, T
30 V
CBO
30 V
CEO
5 V
EBO
150, -55~150 °C
STG
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min Typ Max Unit Test condition
Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage V
Emitter to Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
DC Current Gain hFE 100 - 320 VCE=2V, IC=500mA
Collector to Emitter Saturation Voltage V
Base to emitter Voltage VBE - - 1 V VCE=2V, IC=500mA
Transition Frequency fT - 120 - MHz VCE=2V, IC = 500mA
Collector Output Capacitance Cob - - 40 pF VCB=10V, IE=0, f=1MHz
= 25°C unless otherwise specified)
A
30 - - V IC=1mA, IE=0
(BR)CBO
30 - - V IC=10mA, IB=0
(BR)CEO
5 - - V IE=1mA, IC=0
(BR)EBO
- - 0.1 μA VCB=30V, IE=0
CBO
- - 0.1 μA VEB=5V, IC=0
EBO
- - 2 V IC=1.5A, IB=30mA
CE(sat)
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Jan-2010 Rev. A Page 1 of 3
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVE
2SC2883
NPN Plastic-Encapsulate Transistor
1.5 A , 30 V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Jan-2010 Rev. A Page 2 of 3
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
2SC2883
NPN Plastic-Encapsulate Transistor
1.5 A , 30 V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Jan-2010 Rev. A Page 3 of 3
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