Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2877
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SA1217
·Good linearity of h
APPLICATIONS
·Audio frequency power amplifier
·Low speed switching
·Suitable for output stage of 5 watts
car radio and car stereo
PINNING
PIN DESCRIPTION
FE
1
2
3 Base
Emitter
Collector;connected to
mounting base
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
IB Base current 1 A
PD Total power dissipation TC=25℃ 10 W
Collector-base voltage Open emitter 40 V
Collector-emitter voltage Open base 40 V
Emitter-base voltage Open collector 5 V
a=25℃)
Junction temperature 150 ℃
Storage temperature -55~150 ℃
T
Tj
stg
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2877
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
I
CBO
I
EBO
h
FE-1
h
FE-2
(sat)
BE
Collector-emitter breakdown voltage IC=10mA ;IB=0 40 V
Collector-emitter saturation voltage I
=2.0A; IB=0.2A 0.8 V
C
Base-emitter on voltage IC=0.5A ; VCE=2V 1.0 V
Collector cut-off current VCB=40V; IE=0 0.1
Emitter cut-off current VEB=5V; IC=0 0.1
μA
μA
DC current gain IC=0.5A ; VCE=2V 80 240
DC current gain IC=2.5A ; VCE=2V 25
fT Transition frequency IC=0.5A ; VCE=2V 100 MHz
h
Classifications
FE-1
O Y
80-160 120-240
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2877
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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