Datasheet 2SC2856, 2SC2855 Datasheet (HIT)

2SC2855, 2SC2856

Silicon NPN Epitaxial

Application

• Low frequency low noise amplifier

• Complementary pair with 2SA1190 and 2SA1191

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SC2855, 2SC2856

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol 2SC2855 2SC2856 Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P

CBO

CEO

EBO

C

E

C

Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C

90 120 V
90 120 V
55V
100 100 mA
–100 –100 mA
400 400 mW

2

2SC2855, 2SC2856

Electrical Characteristics (Ta = 25°C)

2SC2855 2SC2856

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base
breakdown voltage

Collector to emitter
breakdown voltage

Emitter to base
breakdown voltage

Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Collector to emitter

saturation voltage
Base to emitter saturation

voltage
Gain bandwidth product f
Collector output

capacitance
Noise figure NF — 0.15 1.5 — 0.15 1.5 dB VCE = 6 V, IC = 0.1 mA,

Noise voltage referred to
input

Notes: 1. The 2SC2855 and 2SC2856 are grouped by hFE as follows.

2. Pulse test

DE

250 to 500 400 to 800

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(sat)

T

90 — — 120 — — V IC = 10 µA, IE = 0

90 — — 120 — — V IC = 1 mA, RBE = ∞

5 ——5 ——V IE = 10 µA, IC = 0

— — 0.1 — — 0.1 µAVCB = 70 V, IE = 0
— — 0.1 — — 0.1 µAVEB = 2 V, IC = 0

1

250 — 800 250 — 800 VCE = 12 V, IC = 2 mA*
— 0.05 0.10 — 0.05 0.10 V IC = 10 mA, IB = 1 mA*

— 0.7 1.0 — 0.7 1.0 V

— 310 — — 310 — MHz VCE = 6 V, IC = 10 mA

Cob — 3 — — 3 — pF VCB = 10 V, IE = 0,

f = 1 MHz

R

= 10 kΩ, f = 1 kHz

g

— 0.2 2.0 — 0.2 2.0 dB VCE = 6 V, IC = 0.1 mA,

R

= 10 kΩ, f = 10 Hz

g

e

n

— 0.7 — — 0.7 — nV/√Hz VCE = 6 V, IC = 10 mA,

R

= 0, f = 1 kHz

g

2

2

3

2SC2855, 2SC2856

Maximum Collector Dissipation Curve

600

(mW)

C

400

200

Collector Power Dissipation P

0

Ambient Temperature Ta (°C)

Typical Output Characteristics

10

8

(mA)

C

6

4

2

Collector Current I

0

4 8 12 16 20

Collector to Emitter Voltage V

18

16
14

12

10

2 µA

I

B

8

6
4

= 0

CE

(V)

Typical Output Characteristics

20

26

24

16

(mA)

C

12

P

C

= 400 mW

22

20

18

16

14

8

12

10

CE

8

6

4

2 µA

IB = 0

(V)

4

Collector Current I

15010050

0

20 40 60 80 100

Collector to Emitter Voltage V

Typical Transfer Characteristics

VCE = 6 V

100

Pulse

(mA)

C

10

Ta = 75°C

25°C

–25°C

1.0

Collector Current I

0.1
0 1.00.2 0.80.4 0.6

Base to Emitter Voltage V

BE

(V)

4

2SC2855, 2SC2856

Collector Cut-Off Current vs.

Collector to Base Voltage

1,000

(pA)

100

CBO

Ta = 75°C

10

1.0

Collector Cut-Off Current I

0.1
Collector to Base Voltage V

Emitter Cut-Off Current vs.Emitter to

Base Voltage

1,000

(pA)

100

EBO

Ta = 75°C

10

1.0

25

Collector Cut-Off Current vs. Collector to

Emitter Voltage

1,000

(nA)

25

–25

CEO

100

Ta = 75°C

25

10

–25

1.0

Collector Cut-Off Current I

40 8020 60 1000

(V)

CB

0.1
0 10020 806040

Collector to Emitter Voltage V

CE

(V)

Collector to Emitter Breakdown

Voltage vs. Base to Emitter Resistance

190

Typical Value
I

= 1 mA

180

170

(V)

C

–25

160

(BR)CER

V

150

Emitter Cut-Off Current I

0.1
Emitter to Base Voltage V

EB

8106240

(V)

Collector to Emitter Breakdown Voltage

140

10 100 1 k 10 k 100 k

Base to Emitter Resistance R

BE

(Ω)

5

2SC2855, 2SC2856

DC Current Transfer Ratio vs.

Collector Current

1,000

FE

Ta = 75°C

300

100

30

DC Current Transfer Ratio h

10

3 10 30 1001

Collector Current I

Base to Emitter Saturation Voltage vs.

Collector Current

10

Pulse

= 10 I

I

C

B

3

(V)

1.0

BE(sat)

V

Ta =–25°C

75 25

0.3

Base to Emitter Saturation Voltage

0.1
3 10 30 1001

Collector Current I

25

–25

VCE = 12 V
Pulse

(mA)

C

(mA)

C

Collector to Emitter Saturation Voltage vs.

Collector Current

1.0
Pulse

I

= 10 I

C

B

0.3

(V)

0.1

CE(sat)

V

Collector to Emitter Saturation Voltage

0.03

0.01

Ta = 75°C

25

–25

Collector Current I

C

Gain Bandwidth Product vs.

Collector Current

1,000

VCE = 6 V

500

(MHz)

T

200

100

50

20

Gain Bandwidth Product f

10

Collector Current I

10 505201.0 20.5

C

(mA)

30 1003101

(mA)

6

2SC2855, 2SC2856

Collector Output Capacitance vs.

Collector to Base Voltage

100

IE = 0

(pF)

f = 1 MHz

ob

30

10

3

Collector Output Capacitance C

1

Collector to Base Voltage V

Noise Voltage Referred to Input vs.

Signal Source Resistance

1,000

VCE = 6 V
f = 1 kHz

100

√

10

(nV/ Hz)

n

e

1.0

Noise Voltage Referred to Input

0.1
100 1 k 10 k 100 k10

Signal Source Resistance R

30 1003101

CB

= 10 mA

I

C

(V)

(Ω)

g

1.0

0.1

Noise Voltage Referred to Input vs.

Collector Current

10

3

√

1.0

(nV/ Hz)

n

e

0.3

Noise Voltage Referred to Input

0.1
Collector Current I

Noise Voltage Referred to Input vs.

Collector to Emitter Voltage

1.0

0.9

0.8

√

(nV/ Hz)

0.7

n

e

0.6

Noise Voltage Referred to Input

0.5

Collector to Emitter Voltage V

VCE = 6 V
R
f = 1 kHz

3100.3 1.00.1

(mA)

C

IC = 1 mA
R

g

f = 1 kHz

30 1003101

= 0

g

= 0

CE

(V)

7

2SC2855, 2SC2856

Noise Voltage Referred to Input vs.

2.0

1.6

1.2

√

0.8

(nV/ Hz)

n

e

0.4

Noise Voltage Referred to Input

0

Frequency

Frequency f (Hz)

VCE = 6 V
R

= 0

g

IC = 1 mA

10

10 k 100 k100 1 k10

8

Unit: mm

0.60 Max

0.5 ± 0.1

4.8 ± 0.3

1.27

2.54

0.7

5.0 ± 0.2

2.3 Max

12.7 Min

3.8 ± 0.3

0.5

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-92 (1)
Conforms
Conforms

0.25 g

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