Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2841
DESCRIPTION
·With TO-3PN package
·High speed switching
·High V
CBO
·Low collector saturation voltage
APPLICATIONS
·For high speed switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 500 V
CBO
V
Collector-emitter voltage Open base 400 V
CEO
V
Emitter-base voltage Open collector 7 V
EBO
IC Collector current (DC) 7 A
ICM Collector current-peak 15 A
PC Collector power dissipation TC=25℃ 70 W
a=25℃)
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2841
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
(sat)
(sat)
Collector-emitter sustaining voltage IC=0.2A ;L=25mH 400 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
=3A ;IB=0.6A 1.0 V
C
=3A ;IB=0.6A 1.5 V
C
Collector cut-off current VCB=500V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
DC current gain IC=0.1A ; VCE=5V 15
DC current gain IC=3A ; VCE=5V 8
fT Transition frequency IC=0.5A ; VCE=10V 11 MHz
Switching times
ton
ts
Turn-on time 1.0 μs
I
=3.0A; VCC=100V
Storage time 3.0 μs
C
I
=0.6A ,IB2=-0.6A
B1
t
f
Fall time
2
1.0 μs
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2841
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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