Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2838
DESCRIPTION ·
·With MT-200 package
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·For high frequency power amplifiers, audio
power amplifiers,switching regulators and
DC-DC converters application
PINNING(see Fig.2)
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25°C)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
PC Collector power dissipation TC=25℃ 120 W
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 150 V
Emitter-base voltage Open collector 5 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2838
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
fT Transition frequency IC=1A ; VCE=10V 70 MHz
Collector-emitter breakdown voltage IC=10mA; IB=0 150 V
Collector-base breakdown voltage IC=1mA; IE=0 150 V
Emitter-base breakdown voltage IE=1mA; IC=0 5 V
Collector-emitter saturation voltage IC=5 A; IB=0.5 A 1.8 V
Collector cut-off current VCB=140V; IE=0 50 μA
Emitter cut-off current VEB=5V; IC=0 50 μA
DC current gain IC=3A ; VCE=4V 60
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2838
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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